Manufacturer related products
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962 -
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
-
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SSM6322ACPZ-R2 | Analog Devices Inc. | 425 | Audio Amplifiers Next gen mobile phone HiFi headphone amp |
| SSM6322ACPZ-R7 | Analog Devices Inc. | 150 | Audio Amplifiers Next gen mobile phone HiFi headphone amp |
| SSM6322ACPZ-RL | Analog Devices Inc. | 150 | Audio Amplifiers Next gen mobile phone HiFi headphone amp |
| SSM6322CP-EBZ | Analog Devices Inc. | 150 | Audio IC Development Tools Eval board for 24 lead LFCSP |
| SSM6G18NU,LF | Toshiba | 150 | MOSFET MOSFET |
| SSM6H19NU,LF | Toshiba | 12,013 | MOSFET UDFN6 S-MOS TRSTR Pd: 0.5W F: 1MHz |
| SSM6J205FE | Toshiba | 150 | MOSFET Vds=-20V Id=-800mA 6Pin |
| SSM6J206FE,LF | Toshiba | 150 | MOSFET SS FET P-Ch 0.32Ohm -2A -8V |
| SSM6J207FE,LF | Toshiba | 1,839 | MOSFET Small-signal FET 0.491Ohm -1.4A -30V |
| SSM6J212FE,LF | Toshiba | 11,484 | MOSFET P-Ch U-MOS VI FET ID -4A -20VDSS 500mW |
| SSM6J213FE(TE85L,F | Toshiba | 4,143 | MOSFET P-Ch U-MOS VI FET ID -2.6A -20V 290pF |
| SSM6J214FE(TE85L,F | Toshiba | 2,255 | MOSFET LowON Res MOSFET ID=-3.6A VDSS=-30V |
| SSM6J215FE(TE85L,F | Toshiba | 2,802 | MOSFET P-Ch U-MOS VI FET ID -3.4A -20V 630pF |
| SSM6J216FE,LF | Toshiba | 3,863 | MOSFET LowON Res MOSFET ID=--4.8A VDSS=-12V |
| SSM6J401TU,LF | Toshiba | 1,607 | MOSFET MOSFET |
